A surface emitting semiconductor laser includes a substrate, a first mirror that is formed on the substrate and includes semiconductor layers of a first conduction type, a second mirror that includes semiconductor layers of a second conduction type, an active region disposed between the first and second mirrors, a current confinement layer that is disposed between the first and second mirrors and includes a selectively oxidized region, and an inorganic insulation film. A mesa structure includes at least the second mirror and the current confinement layer. The inorganic insulation film covers at least a side surface of the mesa structure and having an internal stress equal to or less than 1.510⁹ dyne/cm².