In order to provide ZnO system semiconductor devices having a stable p-type ZnO
layer, a ZnO thin film is doped with nitrogen atoms having a high concentration.
By fabricating the stable p-type ZnO layer, combinations with n-type ZnO layers
easy of fabrication, or combinations with different compositions of p-type layers
or n-type layers are made possible, thereby it enables to provide various configurations
of ZnO system semiconductor devices.
A ZnO system semiconductor device according to the present invention is characterized
in that in a semiconductor device comprising one or more layers of n-type layer
and p-type layers respectively, at least one layer of said p-type layers is (are)
formed of the Zn-polar ZnO system semiconductor film doped with nitrogen atoms
such that the thin film growth direction of said Zn-polar ZnO system semiconductor
film is conformed to the direction of Zn polarity (0001).