A ferroelectric capacitor and a method of manufacturing the same are provided,
wherein the ferroelectric capacitor of a semiconductor device, which sequentially
includes a lower electrode, a ferroelectric layer, and an upper electrode on a
conductive layer connected to a transistor formed on a semiconductor substrate,
includes an oxidation preventing layer between the conductive layer and the lower
electrode. The oxidation preventing layer prevents the conductive layer from being
oxidized during high-temperature heat treatment of the ferroelectric layer. Accordingly,
the oxidation resistivity of the interfaces of the conductive layer, used as a
storage node, and the lower electrode, which faces the conductive layer, increases,
so a temperature at which a ferroelectric thin layer is formed can be also increased.
Consequently, a ferroelectric thin layer having excellent characteristics may be obtained.