In a method of forming a fine pattern, a silicon-oxide-based film is formed directly
or by way of another layer on a substrate or on an underlying layer. The silicon-oxide-based
film is formed such that nitrogen content of the surface thereof assumes a value
of 0.1 atm. % or less. A chemically-amplified photoresist layer is formed on the
silicon-oxide-based film. A mask pattern of a mask is transferred onto the chemically-amplified
photoresist layer upon exposure through the mask. Thus, there is prevented generation
of a tapered corner in a portion of a resist pattern in the vicinity of a boundary
area between the resist pattern and a substrate.