Provided are a semiconductor device having a superlattice semiconductor
layer and a method of fabricating the same. The semiconductor device includes a
superlattice semiconductor layer in which first material layers and second material
layers formed of different materials are alternately stacked. A plurality holes
are formed in the first material layers and the second material layers forming
a superlattice structure, and the holes are filled with materials of the adjacent
material layers. The provided superlattice structure reduces a driving voltage
by transferring charges through the holes in the first material layers and the
second material layers while maintaining a predetermined optical confinement characteristic.