A method for fabricating a fuse for a semiconductor device. The method including: providing a substrate; forming a first dielectric layer on a top surface of said substrate; forming a dielectric mandrel on a top surface of said first dielectric layer; forming a second dielectric layer on top of said mandrel and a top surface of said first dielectric layer forming contact openings down to said substrate in said first and second dielectric layers on opposite sides of said mandrel, said contacts spaced away from said mandrel and leaving portions of said second dielectric layer between said mandrel and said contacts; removing said second dielectric layer from over said mandrel between said contact openings to form a trough; and filling said trough and contact openings with a conductor.