In an n-channel type power MISFET, a source electrode in contact with an n+-semiconductor region (source region) and a p+-semiconductor region (back gate contact region) is constituted with an Al film and an underlying barrier film comprised of MoSi2, use of the material having higher barrier height relation to n-Si for the barrier film increasing the contact resistance to n-Si and backwardly biasing the emitter and base of a parasitic bipolar transistor making it less tending to turn-on, thereby decreasing the leak current of power MISFET.

 
Web www.patentalert.com

< Non-contact treatment method

< Vertically integrated photosensor for CMOS imagers

> Methods for making copper and other metal interconnections in integrated circuits

> Electro-mechanical energy conversion system having a permanent magnet machine with stator, resonant transfer link and energy converter controls

~ 00229