According to one exemplary embodiment, a structure comprises a substrate.
The structure further comprises at least one memory cell situated on the substrate.
The structure further comprises a first interlayer dielectric layer situated over
the at least one memory cell and over the substrate. The structure further comprises
an oxide cap layer situated on the first interlayer dielectric layer. According
to this exemplary embodiment, the structure further comprises an etch stop layer
comprising TCS nitride situated on the oxide cap layer, where the etch stop layer
blocks UV radiation. The structure further comprises a second interlayer dielectric
layer situated on the etch stop layer. The structure may further comprise a trench
situated in the second interlayer dielectric layer and the etch stop layer, where
the trench is filled with copper. The structure may further comprise an anti-reflective
coating layer situated on the second interlayer dielectric layer.