The semiconductor device comprising a chalcogenide phase change material. The chalcogenide material being programmed from one resistance state to another resistance state by applying a programming current to a resistor which is in thermal contact with the chalcogenide material. The semiconductor device may be used as memory element or as a programmable fuse.

 
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< Electrically programmable memory element with improved contacts

> High capacitive density stacked decoupling capacitor structure

> Non-volatile memory having a reference transistor
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