The invention concerns a vertical component with a four-layered structure comprising a thick lightly-doped zone (1) of a first type of conductivity providing the component voltage strength, enclosed with a peripheral wall (2) of a second type of conductivity extending vertically from one surface to the other of the component, and highly doped layer (3) of the second type of conductivity extending over the entire rear surface of the component. A lightly-doped layer (21) of the second type of conductivity extends over the entire surface of the component at the interface between the lightly-doped thick zone of the first type of conductivity and the highly-doped layer of the second type of conductivity.