A data storage device comprising a first memory cell string that includes at least a first magnetic random access memory (MRAM) cell coupled to a second MRAM cell and a circuit coupled to a node between the first MRAM cell and the second MRAM cell is provided. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and in response to a write sense current being applied across the first MRAM cell.

 
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< Magnetic random access memory

< Random cache read

> Nonvolatile memory cell and nonvolatile semiconductor memory device

> Bit line control and sense amplification for TCCT-based memory cells
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