The magneto-resistance effect element includes: a first ferromagnetic layer serving
as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic
layer provided on one side of the first ferromagnetic layer, a third ferromagnetic
layer which is formed on an opposite side of the second ferromagnetic layer from
the first ferromagnetic layer and has a film face having an area larger than that
of the second ferromagnetic layer and whose magnetization direction is changeable
by an external magnetic field, and an intermediate layer which is provided between
the second ferromagnetic layer and the third ferromagnetic layer and which transmits
a change of magnetization direction of the third ferromagnetic layer to the second
ferromagnetic layer; and a tunnel barrier layer provided between the first ferromagnetic
layer and the second ferromagnetic layer.