Overlay measurements for a semiconductor wafer are obtained by forming a periodic grating on the wafer having a first set of ridges and a second set of ridges. The first and second sets of ridges are formed on the wafer using a first mask and a second mask, respectively. After forming the first and second sets of gratings, zero-order cross polarization measurements of a portion of the periodic grating are obtained. Any overlay error between the first and second masks used to form the first and second sets of gratings is determined based on the obtained zero-order cross polarization measurements.

 
Web www.patentalert.com

< Optical sensor system and method for detection of hydrides and acid gases

< Simultaneous optical isolation and channel monitoring system

> Measuring apparatus

> Bioanalysis systems including optical integrated circuit

~ 00208