A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.

 
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< Spin valve with thermally stable pinned layer structure having ruthenium oxide specular reflecting layer

< Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system

> Yoke structure with constricted width

> Thin film magnetic head having thin film coil embedded in first insulating layer covered with second insulating layer
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