A method and apparatus for the formation of oxide in a manner having a planarizing
effect on underlying material, e.g., silicon. In particular, an oxide having a
nonuniform thickness profile is grown on the underlying material. The nonuniform
thickness profile of the oxide is selected according to the nonuniform profile
of the underlying material. Subsequent removal of the oxide leaves behind a planarized
surface of the underlying material, as compared to the pre-oxidized surface.
