A method for modeling a substrate, which includes obtaining vertically discretized
doping profiles in the substrate to facilitate modeling. The method includes employing
substrate region names and substrate cross-section names as access keys to permit
accessing of the vertically discretized doping profiles. The use of the combination
of region names and substrate cross-section names as unique access keys simplifies
access to doping profile information for modeling purposes and yields valuable
information pertaining to the presence of p-type to n-type material transitions.
The information pertaining to transitions may be employed to improve substrate
modeling accuracy through the inclusion of junction capacitances with the modeling process.
