Giant magnetoresistive sensor having selfconsistent demagnetization fields
   
   

The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned between the first and second ferromagnetic free layers, and a biasing component. The first ferromagnetic free layer has a magnetization (M1) in a first direction, when in a quiescent (non-biased) state. The second ferromagnetic free layer has a magnetization (M2) in a second direction that is anti-parallel to the first direction, when in a quiescent (non biased) state.

 
Web www.patentalert.com

< Method and apparatus for preventing ESD and EOS damage in manufacturing magnetoresistive effect read heads

< Perpendicular recording write head with a ferromagnetic shaping layer

> Magnetoresistive effect element with a magnetic sensing region and outside regions thereof, and manufacturing method of the element

> Hard bias layer for read heads
~ 00191