An apparatus integrating electrostatically actuated MEMS devices and high voltage
driver (actuator) electronics on a single substrate, where the driver electronics
utilize offset-gate high voltage thin-film transistors (HVTFTs) that facilitate
the transmission of high actuating voltages using relatively low control voltages,
thereby facilitating the formation of large arrays of electrostatically-actuated
MEMS devices. The driver circuit is arranged such that the high actuating voltage
is applied to an actuating electrode of the actuated MEMS device and drain electrode
of the HVTFT when the HVTFT is turned off, thereby minimizing dielectric breakdown.
When the HVTFT is turned on in response to the relatively low control voltage,
the high actuating voltage is discharged to ground from the drain (offset) electrode
to the source (not offset) electrode.
