After a MOS transistor is formed on a semiconductor substrate, an Ir film,
LT film, PZT film, and IrO2 film are formed in this order on the entire
surface. Although the LT film itself is not a ferroelectric film, a ferroelectric
film is formed by a stacked film of the LT film and PZT film. In a ferroelectric
capacitor having this ferroelectric film, the LT film does not contain Pb, so the
alignment can be readily controlled during the film formation. This raises the
alignment of the LT film. The crystal structure of the LT film is a perovskite
structure similar to that of the PZT film. Since the PZT film is formed on this
LT film, the alignment of the LT film is taken over when the PZT film is grown.
This raises the alignment of the PZT film.
