Data sensing circuits for a magnetic memory cell include a current source circuit
that selectively supplies a current to the magnetic memory cell. A first storage
device selectively coupled to the magnetic memory cell stores a voltage representing
a state of the magnetic memory cell. A second storage device selectively coupled
to the magnetic memory cell stores a voltage representing a state of the magnetic
memory cell. A differential voltage sense circuit coupled to the first and second
storage device that is configured to generate a sensed data output signal for the
magnetic memory cell responsive to sensing a difference between voltages stored
in the first and second storage devices. A control circuit generates control signals
to control the current source to supply current to the magnetic memory cell and
to control the coupling of the first and second storage devices to the magnetic
memory cell. Magnetic memories and methods are also provided.
