A method of forming a capacitor includes, a) providing a node to which electrical
connection to a first capacitor plate is to be made; b) then, providing a finned
lower capacitor plate in ohmic electrical connection with the node using no more
than one photomasking step; and c) providing a capacitor dielectric layer and a
conductive second capacitor plate layer over the conductive layer. Such is preferably
accomplished by, i) providing a layer of conductive material outwardly of the node;
ii) providing a first masking layer over the conductive material layer; iii) etching
a first opening into the first masking layer over the node; iv) providing a second
masking layer over the first masking layer to a thickness which less than completely
fills the first opening; v) anisotropically etching the second masking layer to
define a spacer received laterally within the first opening and thereby defining
a second opening relative to the first masking layer which is smaller than the
first opening; vi) after said anisotropically etching, etching unmasked first masking
layer material away; vii) after said anisotropically etching, etching through the
conductive material layer to extend the second opening to the node, the node and
conductive layer being electrically isolated from one another after the conductive
material layer etching; viii) plugging the extended second opening with an electrically
conductive plugging material, the plugging material electrically interconnecting
the node and conductive layer. Novel capacitor constructions are also disclosed.
