A method and an apparatus for repairing resist latent image on a wafer are disclosed.
In the method, an image scanner equipped with a first and a second wafer carrier,
and a primary imaging column and a secondary imaging column is utilized to conduct
the processes of imaging a resist latent image on a first wafer and repairing a
defect in a resist latent image on a second wafer positioned on a second wafer
carrier simultaneously. The primary imaging column and the secondary imaging column
may be situated in the same vacuum chamber to facilitate operation.
