P-type single crystal zinc-oxide having low resistivity and method for preparation thereof

   
   

The present invention provides a low-resistivity p-type single-crystal zinc oxide. An n-type dopant and p-type dopant are doped into zinc oxide with higher concentration of the p-type dopant than that of the n-type dopant during forming a single-crystal of the zinc oxide through a thin film forming process. Further, an element of the second group is co-doped to allow oxygen to be stabilized.

 
Web www.patentalert.com

< Mercury reduction system and method in combustion flue gas using staging

< Sodium cyanide process

> Spatial localization of dispersed single walled carbon nanotubes into useful structures

> Method for separating ammonia from solutions containing caprolactam and ammonia

~ 00182