Method and device for testing a memory circuit

   
   

A method for testing a memory circuit selects each cell in a region of a cell array as a target cell and performs a test cycle which includes selecting the target cell and neighboring cells which contain at least those cells for which is cannot be ruled out that their operation causes a fault-producing interaction. A data item is written to the target cell in order to produce one of two defined states. A write signal is applied to the neighboring cells in order to produce an undefined state which lies between the two defined states. The target cell and the neighboring cells are then read and the result of the reading process is used to check whether there is any interaction between the operation of the target cell and the operation of the neighboring cells.

 
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