A dry etching method and apparatus are provided which are capable of performing
deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor.
Etching gas is fed into and exhausted from a reaction chamber so that an interior
of the chamber is controlled to be under a predetermined pressure. Plasma is then
generated in the reaction chamber by application of at least 13.56 MHz high-frequency
power to a flat spiral discharge coil or a flat antenna that is provided so as
to face an InP-based compound semiconductor substrate placed on a substrate electrode
in the reaction chamber, and the substrate is etched while a density of the plasma
and ion energy that reaches the substrate are controlled.
