A semiconductor element including an electrically insulating substrate, semiconductor
layers including first and second semiconductor layers of different conduction
types and formed on the electrically insulating substrate, a first electrode formed
on the first semiconductor layer, and a second electrode formed on the second semiconductor
layer revealed by etching at least the first semiconductor layer, wherein a die-bonding
electrode is formed on a side surface of the second electrode, on a side surface
of the second semiconductor layer and on a region of from a side surface to a bottom
surface of the electrically insulating substrate. Metal-metal contact is formed
between the die-bonding electrode and the side surface of the second electrode,
so that low-resistance contact is obtained here.
