A magnetic random access memory (MRAM) device is provided which includes a conductive
line configured to induce a magnetic field with a higher magnitude along at least
a portion of a magnetic cell junction than along a spacing arranged adjacent to
the magnetic cell junction. In some embodiments, the conductive line may include
first portions aligned with a plurality of magnetic cell junctions and second portions
aligned with spacings arranged between the plurality of magnetic cell junctions.
In such an embodiment, the first portions preferably include different peripheral
profiles than the second portions. A method for fabricating such an MRAM device
is also provided herein. The method may include aligning magnetic cell junctions
and first portions of a field-inducing line with each other such that at least
part of the first portions of the field-inducing line are configured to conduct
a higher density of current than second portions of the field-inducing line.
