A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises
a base substrate with an insulating surface, such as a semiconductor substrate
formed with semiconductor elements and having a top insulator film, a lower electrode
formed on the insulating surface, an oxide ferroelectric layer formed on the lower
electrode, a first oxide upper electrode formed on and in contact with the upper
surface of the oxide ferroelectric layer, and a second oxide upper electrode formed
on the first oxide upper electrode, wherein one of the first and second oxide upper
electrodes compromises SRO that contains at least 0.1 at % additive and the other
of the first and second oxide upper electrodes comprises IrOx. A non-volatile
semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer,
excellent in characteristics, and capable of being manufactured efficiently, is provided.
