The present invention discloses a vertical junction structure with multi-PN channels,
which provides a maximum interface between p-type and n-type materials in order
to assist the charge separation, and offers continuous phases in both p- and n-type
materials for charge transport in opposite directions.
The present invention also provides methods for constructing the device structures.
The main steps include 1) assembling a porous structure or a framework with semiconductor
materials of one conduction type on a first electrode, 2) filling pores or coating
the framework made from the materials in step 1 with semiconductors or precursors
of conducting polymer of a opposite conduction type, 3) chemically and physically
treating the system to form closed packed multi-PN channels.
