A memory organization supports a basic page size and an extended page size. A
certain
portion of its memory cells are dual-addressable memory cells which may be used
to provide the additional memory required for the extended pages or alternatively
may be used to provide additional memory within a basic page. A memory array is
preferably implemented as basic pages and directly addressed to support the basic
page size. The received addresses are translated to map each extended page into
a portion of a basic page to support the extended pages. In one embodiment, high
order row addresses are conveyed for use as high-order column addresses, and the
high-order row addresses overridden, to map each extended page into a contiguous
block of basic pages.
