Processes for producing tungsten nitride and tungsten nitride films are
provided in which a tungsten carbonyl compound and a nitrogen-containing reactant
gas are reacted at a temperature below about 600 C. Tungsten nitride precursors
are also included which comprise a tungsten carbonyl compound capable of forming
a tungsten nitride film in the presence of a nitrogen-containing reactant gas at
a temperature of less than about 600 C. A process for forming a film by atomic
layer deposition is also provided which includes introducing a substrate having
a surface into a deposition chamber and heating the substrate to a temperature
sufficient to allow adsorption of a tungsten source precursor or an intermediate
thereof, and thereafter sequentially introducing by pulsing: a tungsten source
precursor which is absorbed as a monolayer, a purging inert gas, a nitrogen-containing
gas for reacting with the monolayer to form a first tungsten nitride layer on the
substrate surface, and an inert purging gas, and repeating the sequence to form
a film of desired thickness.
