Electroluminescence display apparatus with opening in silicon oxide layer

   
   

An inter-layer insulating film and a gate insulating film which are positioned on the optical path of light from an organic EL element to be externally emitted, for example, located under a transparent electrode, are removed. Because SiO.sub.2 films having a refractive index which differs significantly from refractive indexes of other films are used for these films, there was a problem of light attenuation in these layers. Such light attenuation can be reduced by removing these layers located in the region through which light from the organic EL element passes.

Uma película isolando do inter-layer e uma película isolando da porta que sejam posicionadas no trajeto ótico da luz de um elemento orgânico do EL a ser emitido externamente, para o exemplo, localizado sob um elétrodo transparente, são removidas. Porque as películas SiO.sub.2 que têm um índice refractive que diferisse significativamente dos índices refractive de outras películas são usadas para estas películas, havia um problema da atenuação clara nestas camadas. Tal atenuação clara pode ser reduzida removendo estas camadas situadas na região com que a luz do elemento orgânico do EL passa.

 
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