Disclosed herein is a method of manufacturing a semiconductor capacitor. In
the semiconductor capacitor manufacturing method, an amorphous film
composed of non-doped silicon is formed. The amorphous film is changed to
a lower film having projections and depressions defined in the surface
thereof by heat treatment. An amorphous film composed of impurity-doped
silicon is formed over the surface of the lower film. Further, the
amorphous film composed of the impurity-doped silicon is changed to an
upper film having projections and depressions defined in the surface
thereof by heat treatment with the projections and depressions provided
over the surface of the lower film as a basis. The semiconductor capacitor
is equipped with an electrode having the lower film and the upper film.
