A light-emitting device and a method for manufacturing the same are
described, by forming a SiN/Al.sub.1-x-y In.sub.x Ga.sub.y
N(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) superlattice
layer between a substrate and an undoped GaN as a buffer layer, so as to
reduce dislocation density of the buffer layer. In the SiN/Al.sub.1-x-y
In.sub.x Ga.sub.y N(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1,
x+y.ltoreq.1) superlattice layer, Al.sub.1-x-y In.sub.x Ga.sub.y
N(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) can be n-type,
p-type or undoped.
Светоиспускающое приспособление и метод для изготовлять эти же описано, путем формировать SiN/Al.sub.1-x-y In.sub.x Ga.sub.y N(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) слой superlattice x+y.ltoreq.1 между субстратом и undoped GaN как буфер наслоите, для уменьшения плотности вывихивания слоя буфера. В слое SiN/Al.sub.1-x-y In.sub.x Ga.sub.y N(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) superlattice, Al.sub.1-x-y In.sub.x Ga.sub.y N(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) могут находиться н-tip, п-tip или undoped.
