High-k gate dielectric with uniform nitrogen profile and methods for making the same

   
   

High-k transistor gate structures and fabrication methods therefor are provided, wherein a gate dielectric interface region near a semiconductor substrate is provided with very little or no nitrogen, while the bulk high-k dielectric is provided with a uniform nitrogen concentration.

Las estructuras de la puerta del transistor y los métodos Altos-k de la fabricación por consiguiente se proporcionan, en donde una región dieléctrica del interfaz de la puerta cerca de un substrato del semiconductor se proporciona muy poco o nada de nitrógeno, mientras que el dieléctrico alto-k a granel se proporciona una concentración uniforme del nitrógeno.

 
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