A process for fabrication of a semiconductor device including a modified
ONO structure, comprising forming the modified ONO structure by providing
a semiconductor substrate; forming a first oxide layer on the
semiconductor substrate; depositing a layer comprising a high-K dielectric
material on the first oxide layer; and forming a top oxide layer on the
layer comprising a high-K dielectric material. The semiconductor device
may be, e.g., a MIRRORBIT.TM. two-bit EEPROM device or a floating gate
flash device including a modified ONO structure.
