A light-emitting gallium nitride-based compound semiconductor device of a
double-heterostructure. The double-heterostructure includes a
light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N
(0
Um gallium light-emitting nitride-baseou o dispositivo de semicondutor composto de um dobro-double-heterostructure. O dobro-double-heterostructure inclui uma camada light-emitting dada forma de um baixo-low-resistivity In.sub.x Ga.sub.1-x N (0
