An electro-magnetic device, such as magnetic memory device, is disclosed
that includes means for structuring, attenuating or eliminating stray
fields at the boundaries that produce an offset in the magneto-resistive
response. The device comprises a conductive first layer and the
attenuating means comprises a sink layer, electro-magnetically coupled to
the first layer, to attenuate the stray boundary magneto-resistive offset
at a boundary of the first layer during electrical operation.
