Magneto-resistive device including soft synthetic ferrimagnet reference layer

   
   

A memory device includes a data layer having a magnetization that can be oriented in first and second directions; and a synthetic ferrimagnet reference layer. The data and reference layers have different coercivities.

Приспособление памяти вклюает слой данных имея замагничивание можно ориентировать внутри сперва и вторые направления; и синтетический слой справки ferrimagnet. Слои данных и справки имеют по-разному коэрцитивности.

 
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