A method of fabricating poly crystalline silicon type thin film transistor
is disclosed. In the method, before the step of re-crystallization of
amorphous silicon to form polycrystalline silicon active pattern, a step
for injecting predetermined amount of oxygen atom into the surface part of
the amorphous silicon layer. By this addition of step, the surface part of
the silicon layer is to be oxidized and the crystal defect in the
interface between the gate insulating layer and poly crystalline silicon
layer can be cured and the mobility of charge carrier can be improved in
the channel of the thin film transistor.
