Magnetoresistance effect film and device

   
   

A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer (Zr, Hf, Zr--Hf, Zr--Co, Zr--Au, Ni--O, Co--O or Fe--O) so that the antiferromagnetic layer has a surface of an average roughness of 1-5 .ANG.. A conduction layer is formed adjacent to the magnetic layer for sensing a magnetic field. The conduction layer is made of Cu, Ag, Au or an alloy composed of two selected therefrom. A layer made of Zr, Ta, Zr--O, Ta--O or a mixture thereof is laminated on the conduction layer. The MR film exhibits a large resistance variation linearly at near zero magnetic field with an excellent thermal stability.

 
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