Exhaust apparatus for process apparatus and method of removing impurity gas

   
   

In processes for coating objects, such as semiconductor wafers, with a film of metal, such as titanium metal, a metal-containing compound, such as TiCl.sub.4, is injected into a chamber containing the object and a portion of the metal-containing compound reacts to provide the film of metal on the object and a gas containing by-products, such as unreacted TiCl.sub.4 and TiCl.sub.x (x<4), which is discharged out of the chamber and passed through a trap mechanism and an eliminator for the removal of the by-products out of the gas. The by-products have relatively high vapor pressures, making them difficult to trap. The Applicants have found that by adding a reagent, such as water, O.sub.2 or NH.sub.3, into the exhaust gas at a location upstream of the trap mechanism and eliminator, the reagent reacts with the by-product in the gas to produce a compound, such as TiCl.sub.4.2NH.sub.3, which has a significantly lower vapor pressure than the by-product and can be removed in the trap mechanism.

Nos processos para revestir objeta, como wafers de semicondutor, com uma película do metal, tal como o metal titanium, de um composto metal-contendo, tal como TiCl.sub.4, é injetado em uma câmara que contem o objeto e uma parcela do composto metal-contendo reage para fornecer a película do metal no objeto e um gás que contem by-products, tais como TiCl.sub.4 e TiCl.sub.x unreacted (x

 
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