An image sensor with improved productivity and sensitivity is provided. The
image sensor includes a plurality of unit pixels, each unit pixel
including an oxide film formed upon a semiconductor substrate; a gate
electrode formed on the oxide film; a photodiode N-type region formed
within the semiconductor substrate and interfacing with the oxide film,
which is space apart from the gate electrode by a predetermined distance
and disposed on one side of the gate electrode; and a floating diffusion
region formed within the semiconductor substrate and interfacing with the
oxide film, which is spaced apart from the gate electrode by a
predetermined distance and is disposed on the other side of the gate
electrode.
