A process for producing crystalline III-V compound films, preferably thin
films of gallium nitride and other III-V nitrides, on various single
crystal substrates. The process enables the preparation of III-V compound
films by the simple, direct deposition of an amorphous layer of a III-V
compound precursor on a single crystal substrate (as a template). A
chemical reaction followed by a single heat treatment leads to the
crystallization and formation of films by pyrolysis. According to specific
examples of the invention, the chemical precursors gallium dimethyl amide
(Ga.sub.2 [N(CH.sub.3).sub.2 ].sub.6), gallium nitrate
(Ga(NO.sub.3).sub.3, and gallium isopropoxide [Ga(OC.sub.3 H.sub.7).sub.3
are used to produce gallium nitride thin films.
