Positive photoresist composition and method of patterning resist thin film for use in inclined implantation process

   
   

A composition includes (A) an alkali-soluble resin having Mw of 1500 to 10000, (B) a quinonediazide ester of, for example, the following formula, and (C) a phenolic compound containing an acid-decomposable group. When a resin film 1 .mu.m thick is prepared from the alkali-soluble resin (A), the resin film is completely dissolved in 2.38% by weight tetramethylammonium hydroxide aqueous solution at 23.degree. C. within ten seconds. ##STR1##

Uma composição inclui (A) uma resina alkali-soluble que têm um Mw de 1500 a 10000, (B) um ester do quinonediazide de, para o exemplo, a seguinte fórmula, e (C) um composto phenolic que contem um grupo ácido-acid-decomposable. Quando um mu.m da película 1 da resina é preparado densamente da resina alkali-soluble (a), a película da resina está dissolvida completamente em 2.38% pela solução aqueous do hydroxide do tetramethylammonium do peso em 23.degree. C. dentro de dez segundos. ## do ## STR1

 
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