Layer of high-k inter-poly dielectric

   
   

A new Inter Poly Dielectric (IPD) layer is provided for use in creating ultra-small gate electrodes. A first and a second high-k dielectric film are provided which remain amorphous at relatively high processing temperatures. The first high-k dielectric film is of Al.sub.3 O.sub.5 --ZrO.sub.2 --Al.sub.3 O.sub.5, the second high-k dielectric film is aluminum doped ZrO.sub.2 or HfO.sub.2.

Uma camada (IPD) dieléctrica poly inter nova é fornecida para o uso em criar os elétrodos de porta ultra-pequenos. Uma primeira e segunda película dieléctrica elevada-k é fornecida que remanesçam amorfa em temperaturas processando relativamente altas. A primeira película dieléctrica elevada-k é de Al.sub.3 O.sub.5 -- ZrO.sub.2 -- Al.sub.3 O.sub.5, a segunda película dieléctrica elevada-k é ZrO.sub.2 ou HfO.sub.2 doped alumínio.

 
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