Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having diode isolation

   
   

A sensing circuit for determining the logic state of each memory cell in a resistive memory array, wherein each memory cell in the resistive memory array has current control isolation and the logic state of each memory cell can be determined relative to a reference cell having a pre-selected logic state. The sensing circuit comprises a memory cell sensing circuit to determine a bias voltage of a memory cell, a reference cell sensing circuit to determine a bias voltage of a reference cell, an isolation circuit to apply an isolation voltage to turn off a current control element associated with each unselected memory cell, an adjusting circuit to make the bias voltage on the memory cell approximately equal to the bias voltage on the reference cell, and a state determining circuit for determining the logic state of the memory cell.

 
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