The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound semiconductor layers are to grow thereon. It reduces the dislocation density resulted from the difference between the lattice constants of the GaN compound semiconductor layers and the substrate. It also improves the crystallization property of the III-nitride compound semiconductor.


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