Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.

 
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< Thin film transistor and thin film transistor substrate including a polycrystalline semiconductor thin film having a large heat capacity part and a small heat capacity part

< Copper interconnect structure having stuffed diffusion barrier

> Method to increase the compressive stress of PECVD silicon nitride films

> Liquid crystal display device and method of driving thereof

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