A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.

 
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< Ultra-thin body vertical tunneling transistor

< Semiconductor on insulator (SOI) switching circuit

> Method of making p-channel and n-channel MIS transistors using single film formation of TaC

> Image sensor and method of manufacturing the same
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